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Naura Technology demonstrates 3D DRAM etching breakthrough for Chinese chipmakers
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Naura Technology demonstrates 3D DRAM etching breakthrough for Chinese chipmakers

Sep 4, 2026

Chinese semiconductor equipment manufacturer Naura Technology Group announces a breakthrough in 3D DRAM etching equipment, offering ChangXin Memory Technologies (CXMT) a domestic path to scale advanced memory production. CXMT, which holds a 7.7% global DRAM market share and raised 57.9 billion yuan in its 2026 IPO, aims to double its 300,000 wafer-per-month capacity and mass-produce HBM3 by late 2026 despite tight US export controls.

Naura 3D DRAM etching breakthrough

  • ▪Naura Technology Group achieved a semiconductor equipment breakthrough to assist ChangXin Memory Technologies in producing advanced 3D DRAM chips.
  • ▪Naura Technology Group's semiconductor equipment development is oriented toward enabling 3D DRAM fabrication and supporting high-bandwidth memory stacking.
  • ▪Naura Technology Group has not publicly disclosed granular details, performance benchmarks, or production timelines for its announced 3D DRAM equipment breakthrough.

US semiconductor export controls

  • ▪United States export restrictions block Chinese chipmakers like ChangXin Memory Technologies from accessing cutting-edge foreign equipment, including extreme ultraviolet lithography machines.
  • ▪The United States has progressively tightened export controls on semiconductor technology to China since 2022, restricting finished chips and manufacturing equipment.

CXMT production capacity expansion

  • ▪ChangXin Memory Technologies operates multiple 12-inch DRAM fabrication facilities with a combined capacity of approximately 300,000 wafers per month.
  • ▪ChangXin Memory Technologies raised approximately 57.9 billion yuan in its 2026 initial public offering on the Shanghai Stock Exchange to expand DRAM wafer production lines.
  • ▪ChangXin Memory Technologies plans to double its production capacity from its current level of approximately 300,000 wafers per month.

CXMT market share growth

  • ▪ChangXin Memory Technologies has become the world's fourth-largest DRAM producer, holding a global market share of approximately 7.7%.
  • ▪ChangXin Memory Technologies has achieved yield rates above 90% on certain DDR5 products, which have demonstrated competitive performance on AMD platforms.

HBM3 mass production timeline

  • ▪ChangXin Memory Technologies is targeting the mass production of high-bandwidth memory HBM3 chips by late 2026.
  • ▪The high-bandwidth memory market is currently dominated by South Korean chipmaker SK Hynix.

Global DRAM market competition

  • ▪The global DRAM market is dominated by three major players: Samsung, SK Hynix, and Micron.
  • ▪US-based chipmaker Micron has been partially banned from Chinese government procurement, complicating its relationship with the Chinese market.

Debatable claims

  • ▪China will achieve self-sufficiency in advanced semiconductor manufacturing
  • ▪US semiconductor export controls are failing to block Chinese technological advancement

2 sources

Digitimes
Naura 3D DRAM etching breakthrough could give CXMT a new path beyond EUV
View source article
Cryptobriefing
Naura claims breakthrough to aid CXMT in 3D DRAM production
View source article

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