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Chinese chipmaker CXMT begins production of HBM3E and LPDDR6 memory chips
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Chinese chipmaker CXMT begins production of HBM3E and LPDDR6 memory chips

Aug 31, 2026

Chinese memory chipmaker ChangXin Memory Technologies (CXMT) has achieved significant milestones by starting limited production of advanced HBM3E memory and entering mass production of LPDDR6 chips. Major domestic firms like Alibaba's T-Head and Cambricon are testing the HBM3E silicon, while Xiaomi's upcoming 18 Fold smartphone will debut the LPDDR6 memory. Despite these breakthroughs, CXMT remains three to five years behind South Korean leaders Samsung and SK hynix due to equipment constraints. Meanwhile, CXMT has filed a federal lawsuit against the Pentagon to challenge its Chinese military designation.

CXMT HBM3E risk production

  • ▪The specifications, output volume, and yield of ChangXin Memory Technologies' HBM3E products remain undisclosed, and its high-bandwidth memory capability is unproven at scale.
  • ▪ChangXin Memory Technologies has started manufacturing advanced high-bandwidth memory HBM3E in limited volumes, with plans to ramp up larger-scale mass production by 2027.

LPDDR6 mass production launch

  • ▪ChangXin Memory Technologies announced on August 29, 2026, that it has entered mass production of LPDDR6 memory, representing a structural redesign of mobile memory communication.
  • ▪ChangXin Memory Technologies spent 6.859 billion yuan on research and development in the first half of 2026, an 87% increase year-on-year, employing 7,491 R&D staff.
  • ▪ChangXin Memory Technologies' LPDDR6 production chips are rated at 12,800 Mbps peak speed, which is the upper limit of what the company's deep-ultraviolet lithography process can reliably yield.

Xiaomi 18 Fold debut

  • ▪The Xiaomi 18 Fold, scheduled to launch in September 2026, is the first commercial device confirmed to carry ChangXin Memory Technologies' LPDDR6 memory.
  • ▪The Xiaomi 18 Fold features the Xiaomi Xring O3 system-on-chip, which is built on TSMC's N3P 3-nanometer node and integrates 24 billion transistors.
  • ▪Xiaomi is a strategic investor in ChangXin Memory Technologies, having participated in the chipmaker's 66.6 billion yuan Shanghai STAR Market IPO in July 2026.

Chinese AI chip testing

  • ▪Alibaba Group's chip-design division T-Head and Beijing-based Cambricon Technologies are actively testing ChangXin Memory Technologies' HBM3E components alongside their in-house AI processors.
  • ▪If qualification testing succeeds, Chinese technology firms plan to integrate ChangXin Memory Technologies' HBM3E memory modules into commercial products as early as 2027.

Pentagon lawsuit over designation

  • ▪ChangXin Memory Technologies filed a federal lawsuit against the Pentagon on August 28, 2026, challenging its inclusion on a list of companies tied to the Chinese military.
  • ▪A Department of Defense direct procurement ban on ChangXin Memory Technologies took effect June 30, 2026, with an indirect ban on embedded components starting June 30, 2027.

Samsung SK hynix technology gap

  • ▪Samsung Electronics and SK hynix had moved into HBM4 production and begun supplying 12-layer HBM4E samples to major customers by mid-2026.
  • ▪SK hynix's equivalent LPDDR6 reaches a 14.4 Gbps specification ceiling using an EUV process, whereas ChangXin Memory Technologies is limited to 12.8 Gbps by DUV equipment constraints.
  • ▪ChangXin Memory Technologies remains an estimated three to five years behind leading South Korean high-bandwidth memory producers Samsung Electronics and SK hynix.

4 sources

Timesofindia
Chinese chipmaker that sued Pentagon makes breakthrough in memory chips
View source article
Techtimes
CXMT Ships LPDDR6 First: Xiaomi 18 Fold Arrives With Chinese Memory Inside
View source article
Tomshardware
CXMT reportedly begins risk production of HBM3E memory in breakthrough for Chinese DRAM production — company could be in mass production in 2027
View source article
Koreaherald
China’s CXMT begins small-scale HBM3E production: report
View source article

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