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EUV lithography stories

Sep 8, 2026

ASML, TSMC, Samsung and Intel form consortium to develop 12-inch photomasks for AI chips

Major chipmakers have committed to ASML's initiative to transition from 6-inch to 12-inch photomasks, forming the Large Mask Consortium to address throughput limitations in high-NA EUV lithography systems. The move aims to eliminate stitching constraints that currently prevent the newest machines from printing the largest AI chips.

Sep 8, 2026·5 sources
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Top claims

  • ▪SK Hynix is separately evaluating whether to join the Large Mask Consortium.
  • ▪ASML Chief Technology Officer Marco Pieters stated that transitioning to 12-inch masks will increase the scanner productivity of High-NA EUV systems by 40%.
  • ▪Large chip dies exceeding the 26 mm by 16.5 mm High-NA EUV exposure field require reticle stitching, where two overlapping half-fields are exposed and aligned at a seam.

Subtopics

AI chip design1AI compute & environmental impact1Compute, chips & AI infrastructure1Semiconductor manufacturing1

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